| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,222 pcs
|
3222 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Efficiency | |
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| Gain | |
| Input Capacitance | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The MRF21030LR3 from Freescale Semiconductor is a lateral N-Channel enhancement-mode MOSFET designed for RF power applications, specifically in PCN and PCS base stations operating between 2000 to 2200 MHz. It is suitable for Class AB amplifiers in cellular radio and WLL applications.
This RF MOSFET features a typical output power of 3.5 Watts and a power gain of 14 dB, with an efficiency of 15%. It is characterized by high gain, high efficiency, and high linearity, making it suitable for FM, TDMA, and CDMA applications. The device is capable of handling a 10:1 VSWR at 28 Vdc and 30 Watts CW output power.
Key electrical characteristics include a drain-source breakdown voltage of 65 Vdc, a gate threshold voltage between 2-4 Vdc, and a typical drain-source on-voltage of 0.29 Vdc at 1A. Capacitance values such as input capacitance (Ciss) are 98.5 pF, output capacitance (Coss) are 37 pF, and reverse transfer capacitance (Crss) are 1.3 pF at 1 MHz.
The MRF21030LR3 is supplied in a NI-400 package and is available on tape and reel, with 250 units per reel. It also includes integrated ESD protection and exhibits excellent thermal stability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRF21030LR3 has a typical output power of 3.5 Watts.
The typical power gain for the MRF21030LR3 is 14 dB.
The typical operating voltage for the MRF21030LR3 is 28 V.
The MRF21030LR3 is supplied in the NI-400 package.