MRF1K50HR5

The NXP Semiconductors MRF1K50HR5 is a high-ruggedness N-Channel enhancement-mode LDMOS RF power transistor. It is designed for use in industrial, scientific, medical, broadcast, aerospace, and mobile radio applications requiring high power handling capabilities.

This device features an unmatched input and output design, allowing for utilization across a wide frequency range from 1.8 to 500 MHz. It can deliver up to 1500W of continuous wave (CW) power output with a typical gain of 22.5 dB and operates at a drain-source voltage of 50 Vdc. The transistor is characterized for ease of use from 30 to 50V and is suitable for linear applications.

Key features include high drain-source avalanche energy absorption capability and integrated ESD protection. The MRF1K50HR5 is designed for single-ended or push-pull configurations. It is available in a SOT-979A package with a chassis mount type, utilizing the NI-1230-4H supplier device package code.

Typical applications include laser generation, plasma etching, particle accelerators, MRI, industrial heating, radio and VHF TV broadcast, VHF omnidirectional range (VOR), HF and VHF communications, weather radar, and VHF/UHF base stations.