| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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104 pcs
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104 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Junction Temperature | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The MRF1946 from Motorola Semiconductor is an NPN Silicon RF Power Transistor engineered for commercial and industrial large-signal power amplifiers operating at 12.5V. This device is characterized for performance up to 220 MHz.
Key electrical specifications include a minimum DC current gain (hFE) of 40 at 1.0 Adc and 5.0 Vce. It provides a typical output power of 30 Watts with a power gain of 10 dB and an efficiency of 60% at 175 MHz and 12.5V supply. The transistor also features diffused emitter resistor ballasting for improved reliability and is specified for load mismatch conditions at high line and overdrive.
With a maximum collector current of 8.0 Adc and a junction temperature up to 200°C, the MRF1946 is suitable for demanding RF applications. It is available in case styles 211-07 and 145A-09.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical output power is 30 Watts.
The power gain is typically 10 to 11 dB.
The collector efficiency is typically 60 to 70 %.
The maximum continuous collector current is 8 Adc.
The maximum junction temperature is 200 °C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.