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MRF19120

The Motorola Semiconductor MRF19120 is an N-Channel enhancement-mode lateral MOSFET designed for RF power applications. It offers high gain, efficiency, and linearity for CDMA base station designs.

✓ Total Stock: 37 pcs

$ Price Range: $8.20

MRF19120 Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Partservice ✓ Non-Authorised Inventory information	37 pcs On Request	37 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

MRF19120 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Motorola Semicondutor
Efficiency	16%
Frequency	1930 to 1990 MHz
Style	Style 1
Voltage	26 Vdc

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MRF19120 Description

Short technical summary and product information.

The MRF19120 from Motorola Semiconductor is an RF Power Field-Effect Transistor featuring N-Channel enhancement-mode lateral MOSFET technology. It is specifically designed for CDMA base station applications operating within the 1930 to 1990 MHz frequency range, and is also suitable for FM, TDMA, and multicarrier amplifier applications. This device is intended for use in Class AB amplifiers for PCN-PCS/cellular radio and WLL applications.

Key electrical characteristics include a typical output power of 15 Watts (Avg.) and 120 Watts (CW) at 1990 MHz and 26 Volts. It boasts a typical power gain of 11.7 dB and an efficiency of 16%. The transistor is internally matched for ease of use and offers high linearity. It is capable of handling a 10:1 VSWR at 26 Vdc and 1990 MHz.

Maximum ratings include a Drain-Source Voltage of 65 Vdc and a Gate-Source Voltage range of -0.5 to +15 Vdc. The device has a total power dissipation of 389 Watts at 25°C and an operating junction temperature of up to 200°C. Thermal resistance from junction to case is 0.45 °C/W.

The MRF19120 is housed in Case 375D-04, Style 1. It includes integrated ESD protection. Note that this part is marked as 'NOT RECOMMENDED FOR NEW DESIGN' in the datasheet.

MRF19120 Quick Information

Product Type: RF Power Field-Effect Transistor

Canonical Name: MRF19120 N-Channel Enhancement-Mode Lateral MOSFET RF Power Field Effect Transistor

Subcategory: RF Power MOSFET

MRF19120 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

MRF19120 Estimated Pricing

Qty	Low	High
1+	$8.20	$8.20

Estimated market price range - modelled values for guidance only, not live distributor offers.

MRF19120 Features

Designed for CDMA base station applications.
120 Watts CW output power at 1990 MHz.
High gain, efficiency, and linearity.
Internally matched for ease of use.
Capable of handling 10:1 VSWR.

MRF19120 Applications

Used in CDMA base station amplifiers.
Suitable for PCN-PCS/cellular radio.
Applicable for WLL systems.
Designed for multicarrier amplifier applications.

MRF19120 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the typical output power of the MRF19120?

The MRF19120 has a typical average output power of 15 Watts and a CW output power of 120 Watts at 1990 MHz and 26 Volts.

What is the operating frequency range for the MRF19120?

The MRF19120 is designed for frequencies from 1930 to 1990 MHz.

What is the power gain of the MRF19120?

The typical power gain for the MRF19120 is 11.7 dB.

What is the efficiency of the MRF19120?

The typical efficiency of the MRF19120 is 16%.

What is the Drain-Source Breakdown Voltage for the MRF19120?

The minimum Drain-Source Breakdown Voltage (V(BR)DSS) is 65 Vdc.

What is the Gate Threshold Voltage range for the MRF19120?

The Gate Threshold Voltage (VGS(th)) ranges from 2.5 Vdc to 3.8 Vdc.

What is the operating junction temperature for the MRF19120?

The maximum operating junction temperature (TJ) is 200 °C.