| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,010 pcs
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2010 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Freescale Semiconductor MRF19085LR3 is a high-performance RF L BAND N-CHANNEL LDMOS transistor designed for demanding applications. This component delivers an output power of 18W and is rated for a voltage of 65V, with a test voltage of 26V. It operates efficiently within the frequency range of 1.93GHz to 1.99GHz, drawing a current of 850 mA.
The transistor features a gain of 13dB and utilizes LDMOS technology for optimal performance. It is supplied in the SOT-957A package, with the supplier device package identified as NI-780H-2L. This packaging is suitable for surface-mount applications.
This RF FET is designed for use in various RF power amplification circuits. Its specifications make it suitable for applications requiring reliable performance in the L-band frequency spectrum. The component's robust construction and electrical characteristics ensure consistent operation in challenging environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The rated voltage for the MRF19085LR3 is 65V.
The MRF19085LR3 has an output power of 18W.
The operating frequency range is 1.93GHz to 1.99GHz.
The MRF19085LR3 uses LDMOS technology.
The MRF19085LR3 is supplied in the SOT-957A package.