| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,333 pcs
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2333 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRF174 from MACOM Technology Solutions is an N-Channel enhancement mode MOSFET specifically designed for wideband large-signal output and driver stages operating up to a 200 MHz frequency range. This RF power transistor delivers a nominal output power of 125W and is guaranteed for performance at 150 MHz and 28 Vdc, providing a minimum gain of 9.0 dB and a minimum efficiency of 50%.
Key features include excellent thermal stability, making it ideally suited for Class A operation. It also facilitates manual gain control, ALC, and various modulation techniques. The device is 100% tested for load mismatch across all phase angles with a 30:1 VSWR. Its low noise figure is rated at 3.0 dB typical at 2.0 A and 150 MHz.
The MRF174 comes in the 211-11, Style 2 package, designed for robust performance in demanding RF applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRF174 has a nominal output power of 125W.
The MRF174 is guaranteed for performance at 150 MHz.
The minimum gain for the MRF174 at 150 MHz and 28 Vdc is 9.0 dB.
The typical noise figure for the MRF174 is 3.0 dB at 2.0 A and 150 MHz.
The operating voltage for the MRF174 is 28 Vdc.
The MRF174 is supplied in the 211-11, Style 2 package.