| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRF173CQ is a high-performance RF Power MOSFET manufactured by Motorola Semiconductor. This N-channel, Metal-Oxide Semiconductor device is specifically designed for amplifier applications within the 2.3GHz to 2.4GHz frequency range.
Key electrical characteristics include a minimum breakdown voltage of 65V and a maximum drain current of 28A. It provides a typical gain of 18dB and an output power of 20W. The device is supplied in a SOT-502A package, suitable for surface mounting.
This component is ideal for RF power amplification stages in various communication systems. Its robust design and specified performance parameters make it a reliable choice for demanding RF applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain current (ID) for the MRF173CQ is 28 A.
The MRF173CQ has a minimum breakdown voltage of 65 V.
The MRF173CQ is an RF Power MOSFET with an N-channel configuration.
The MRF173CQ operates in the frequency range of 2.3GHz to 2.4GHz.
The MRF173CQ has an output power of 20W.
The MRF173CQ is supplied in a SOT-502A package.
The standard package quantity for the MRF173CQ is 100.