MRF173CQ The MRF173CQ is an RF Power MOSFET from Motorola Semiconductor designed for amplifier applications. It offers a 65V breakdown voltage and 28A maximum drain current.
Mfr Part #:

MRF173CQ

Available from 1 distributors
Mfr Name: Motorola Semicondutor
Motorola Semicondutor
The MRF173CQ is an RF Power MOSFET from Motorola Semiconductor designed for amplifier applications. It offers a 65V breakdown voltage and 28A maximum drain current.
✓ Total Stock: 300 pcs
$ Price Range: $0.99

MRF173CQ Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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300 pcs
300 pcs On Request 1 On Request On Request On Request On Request On Request

MRF173CQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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MRF173CQ Description

Short technical summary and product information.

The MRF173CQ is a high-performance RF Power MOSFET manufactured by Motorola Semiconductor. This N-channel, Metal-Oxide Semiconductor device is specifically designed for amplifier applications within the 2.3GHz to 2.4GHz frequency range.

 

Key electrical characteristics include a minimum breakdown voltage of 65V and a maximum drain current of 28A. It provides a typical gain of 18dB and an output power of 20W. The device is supplied in a SOT-502A package, suitable for surface mounting.

 

This component is ideal for RF power amplification stages in various communication systems. Its robust design and specified performance parameters make it a reliable choice for demanding RF applications.

MRF173CQ Quick Information

Product Type: RF Power MOSFET
Canonical Name: MRF173CQ RF Power MOSFET
Subcategory: RF Power MOSFET

MRF173CQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

MRF173CQ Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MRF173CQ Features

  • N-channel RF Power MOSFET
  • 65V minimum breakdown voltage
  • 28A maximum drain current
  • 20W output power
  • 2.3GHz to 2.4GHz frequency range

MRF173CQ Applications

  • Suitable for RF power amplifier applications.
  • Used in high-frequency RF transmission systems.
  • Ideal for industrial RF signal amplification.
  • Applicable in communication base station transmitters.
  • Designed for RF power switching circuits.

MRF173CQ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain current for the MRF173CQ?

The maximum drain current (ID) for the MRF173CQ is 28 A.

What is the minimum breakdown voltage of the MRF173CQ?

The MRF173CQ has a minimum breakdown voltage of 65 V.

What type of transistor is the MRF173CQ?

The MRF173CQ is an RF Power MOSFET with an N-channel configuration.

What is the operating frequency range for the MRF173CQ?

The MRF173CQ operates in the frequency range of 2.3GHz to 2.4GHz.

What is the output power of the MRF173CQ?

The MRF173CQ has an output power of 20W.

What package is the MRF173CQ supplied in?

The MRF173CQ is supplied in a SOT-502A package.

What is the standard package quantity for the MRF173CQ?

The standard package quantity for the MRF173CQ is 100.

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