| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,200 pcs
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1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRF166C is a high-performance RF Power MOSFET manufactured by Motorola Semiconductor, suitable for amplifier applications. This N-channel, Silicon device utilizes Metal-Oxide Semiconductor technology and is configured as a single transistor.
Key electrical specifications include a minimum breakdown voltage of 65V and a maximum drain current (ID) of 28A. It operates within a frequency range of 2.3GHz to 2.4GHz, providing a gain of 18dB and an output power of 20W. The transistor element material is Silicon, and it is housed in a rectangular SOT-502A package.
The MRF166C is designed for robust performance in RF power applications. Its specifications make it a suitable component for various amplification circuits requiring reliable power handling and frequency response.
The component is supplied in Tape & Reel packaging with a standard package quantity of 100 units. The terminal form is flat, and the package body material is ceramic with a metal-sealed cofired construction.
The maximum drain current (ID) for the MRF166C is 28 A.
The minimum breakdown voltage for the MRF166C is 65 V.
The MRF166C operates in the frequency range of 2.3 GHz to 2.4 GHz.
The MRF166C RF Power MOSFET has a typical gain of 18 dB.
The MRF166C has an output power of 20 W.
The MRF166C is an N-channel RF Power MOSFET.
The MRF166C is supplied in a SOT-502A package.