| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,500 pcs
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3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRF1570FNT1 from NXP Semiconductors is a high-performance RF Power MOSFET utilizing LDMOS technology. It is designed for broadband commercial and industrial applications, particularly in mobile FM equipment operating at 12.5 volts and frequencies up to 470 MHz.
Key electrical specifications include an output power of 70 Watts and a power gain of 11.5 dB, measured at 470 MHz and 12.5 Volts. The device is characterized with excellent thermal stability and is capable of handling a 20:1 VSWR under specific conditions. Its broadband performance spans across the 135-175 MHz and 400-470 MHz bands.
The MRF1570FNT1 is housed in a TO-272-8 plastic package, suitable for chassis mounting. This component is designed for large-signal, common-source amplifier applications, providing reliable performance in demanding RF environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRF1570FNT1 provides 70 Watts of output power at 470 MHz and 12.5 Volts.
The power gain for the MRF1570FNT1 is 11.5 dB, specified at 470 MHz and 12.5 Volts.
The MRF1570FNT1 operates at 12.5 V.
The MRF1570FNT1 is supplied in a TO-272-8 package.
The MRF1570FNT1 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MRF1570FNT1 is 1.