MRF1535NT1

The MRF1535NT1 from NXP Semiconductors is an RF Power Field Effect Transistor designed for broadband applications in commercial and industrial equipment, particularly for 12.5 volt mobile FM systems. This N-Channel enhancement-mode lateral MOSFET is specified for performance up to 520 MHz.

Key electrical characteristics include a maximum output power of 35 Watts and a power gain of 13.5 dB, with an efficiency of 55% at 520 MHz and 12.5 Volts. The device is capable of handling 20:1 VSWR under specified conditions. It features excellent thermal stability and is characterized with series equivalent large-signal impedance parameters.

The MRF1535NT1 is housed in a TO-272-6 WRAP plastic package, suitable for chassis mounting. The 'N' suffix indicates lead-free terminations, and the 'T1' suffix signifies packaging in tape and reel for automated assembly, with 500 units per 13-inch reel.

This MOSFET is designed for large-signal, common source amplifier applications. It operates with a drain-source voltage up to 40 Vdc and a continuous drain current of 6 Adc. The device also offers broadband performance across multiple frequency bands, including 135-175 MHz, 400-470 MHz, and 450-520 MHz.