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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRF1518NT1 from NXP Semiconductors is a high-performance RF Power Field Effect Transistor. Designed as an N-Channel enhancement-mode lateral MOSFET, it is suitable for broadband commercial and industrial applications operating at frequencies up to 520 MHz.
This device is ideal for large-signal, common-source amplifier applications in 12.5-volt mobile FM equipment. It is specified to deliver 8 Watts of output power with a power gain of 13 dB and an efficiency of 60% at 520 MHz and 12.5 Volts. The MRF1518NT1 is capable of handling 20:1 VSWR under specific conditions.
Key electrical characteristics include a drain-source voltage rating of 40 Vdc, a continuous drain current of 4 Adc, and a gate threshold voltage typically between 1.6 Vdc. Capacitance values such as input capacitance (Ciss) are 66 pF, output capacitance (Coss) are 33 pF, and reverse transfer capacitance (Crss) are 4.5 pF, all measured at 1 MHz.
The MRF1518NT1 is available in a PLD-1.5 package and features a surface mount type. It is RoHS compliant and designed for excellent thermal stability, with a low thermal resistance of 2 °C/W (junction to case).
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRF1518NT1 is specified to deliver 8 Watts of output power.
The MRF1518NT1 is designed for applications with frequencies up to 520 MHz.
The MRF1518NT1 offers a typical power gain of 13 dB.
The MRF1518NT1 has a maximum drain-source voltage rating of 40 Vdc.
The MRF1518NT1 is supplied in a PLD-1.5 package.
Yes, the MRF1518NT1 is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the MRF1518NT1 is 3 (168 Hours).