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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MACOM MRF151 is an N-Channel RF Power Field-Effect Transistor designed for broadband commercial and military applications operating at frequencies up to 175 MHz. This device delivers a guaranteed output power of 150 W at 50 V and 30 MHz, with a typical gain of 22 dB and efficiency of 40%. At 175 MHz and 50 V, it provides 150 W output power with 13 dB gain.
Key features include a nitride-passivated die for enhanced reliability and ruggedness tested at rated output power. Its high power, high gain, and broadband performance make it suitable for solid-state transmitters in FM broadcast or TV channel frequency bands.
The MRF151 utilizes MOSFET technology and operates at a voltage of 50 V. It has a current rating of 250 mA and a current rating of 16 A. The device is designed for robust performance in demanding RF applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The guaranteed output power at 30 MHz and 50 V is 150 W.
The guaranteed gain at 30 MHz and 50 V is 18 dB.
The typical efficiency at 30 MHz and 50 V is 40%.
The output power at 175 MHz and 50 V is 150 W.
The gain at 175 MHz and 50 V is 13 dB.
The operating voltage is 50 V.
The device is designed for frequencies up to 175 MHz.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.