| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRF13750HR5 is an RF MOSFET manufactured by NXP Semiconductors, suitable for high-power RF amplification. It provides a typical power output of 750 W at 915 MHz continuous wave operation and 850 W in pulse mode. The device has a gain of 19.3 dB at 915 MHz CW and 20.5 dB in pulse mode, with drain efficiency of 67.1% CW and 69.2% pulse. It is rated for a drain-source voltage of 105 Vdc and a maximum operating voltage of 55 Vdc. The device is packaged for RF applications and designed for thermal management with a total device dissipation of 1333 W at 25°C. It is suitable for use in RF transmitters, power amplifiers, and other high-frequency RF systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 105 Vdc.
The typical power output is 750 W at 915 MHz CW.
The gain is 19.3 dB at 915 MHz CW.
The drain efficiency is 67.1% at 915 MHz CW.
The maximum operating voltage is 55 Vdc.