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1 pcs | On Request | 1 | On Request | On Request | 9111 | On Request | On Request |
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The MRF10120 is a high-power Silicon NPN transistor from Motorola Semiconductor, engineered for demanding long pulse common base amplifier applications such as JTIDS and Mode S transmitters. It delivers a guaranteed performance of 120W peak output power across a frequency range of 960-1215 MHz.
Key electrical characteristics include a minimum gain of 7.6 dB and a typical gain of 8.5 dB at 1.215 GHz and 36 Vdc. The transistor is 100% tested for load mismatch at all phase angles with a 3:1 VSWR, ensuring robust performance. It features internal input and output matching for broadband operation.
Constructed for reliability and longevity, the MRF10120 is housed in a hermetically sealed industry-standard package. It utilizes silicon nitride passivation and gold metallization, with emitter ballasting to resist metal migration and ensure a long operational life. The CASE 355C-02, STYLE 1 package is suitable for through-hole mounting.
This RF transistor is designed for applications requiring high power output and reliable performance in challenging RF environments.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
960-1215 MHz.
120 W peak.
Minimum 7.6 dB, typical 8.5 dB at 1.215 GHz and 36 Vdc.
The MRF10120 is housed in a 355C-02 hermetically sealed package.
Silicon NPN RF power transistor.
Yes, it has internal input and output matching for broadband operation.
It is 100% tested for load mismatch at all phase angles with 3:1 VSWR.