| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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89 pcs
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89 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Everspin MR2A08AYS35R is a 4Mbit non-volatile memory device utilizing MRAM technology. It provides RAM-like performance with non-volatility, featuring a parallel interface and a memory organization of 512K x 8.
This component boasts a fast access time of 35ns and a write cycle time of 35ns, making it suitable for applications requiring rapid data transfer. It operates within a voltage range of 3V to 3.6V and is designed for operation between 0°C and 70°C.
The MR2A08AYS35R is available in a 44-TSOP2 package with a surface mount orientation. Its robust MRAM technology ensures high endurance and data persistence, making it a reliable choice for various industrial and commercial applications.
Key specifications include its 4Mbit density, parallel interface, and non-volatile memory type. The device is packaged in a 44-TSOP (0.400", 10.16mm Width) and requires surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MR2A08AYS35R has a memory size of 4Mbit.
The MR2A08AYS35R uses a Parallel memory interface.
The access time for the MR2A08AYS35R is 35 ns.
The MR2A08AYS35R operates within a voltage range of 3V to 3.6V.
The operating temperature range for the MR2A08AYS35R is 0°C to 70°C.
The MR2A08AYS35R is supplied in a 44-TSOP2 package.
The MR2A08AYS35R is listed as RoHS3 Compliant.