| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
300 pcs
|
300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Power Dissipation | |
| Transistor Type |
The MQ2N2608 is a P-MOSFET transistor from Microchip Technology, designed for general-purpose electronic applications. This component offers a drain current of 1mA and a power dissipation rating of 300mW, making it suitable for low-power switching and amplification tasks.
As a P-channel MOSFET, it is commonly used in circuits requiring a high-side switch or in applications where a positive voltage controls the gate. Its specifications suggest suitability for signal processing and control functions within electronic devices.
Further details regarding its specific package type, operating temperature range, and lead configurations would typically be found in the manufacturer's datasheet. However, its classification as a P-MOSFET indicates its role in complementary or specific logic implementations.
| Qty | Low | High |
|---|---|---|
| 1+ | $80.08 | $80.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MQ2N2608 is a P-MOSFET transistor.
The drain current is 1mA.
The power dissipation is 300mW.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.