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MPSW42G The ON Semiconductor MPSW42G is an NPN silicon transistor designed for high voltage applications. It features a 300V collector-emitter voltage and 500mA continuous collector current.
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MPSW42G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MPSW42G is an NPN silicon transistor designed for high voltage applications. It features a 300V collector-emitter voltage and 500mA continuous collector current.
✓ Total Stock: 13,410 pcs
$ Price Range: $0.99

MPSW42G Available from 1 distributor

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13,410 pcs
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MPSW42G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MPSW42G Description

Short technical summary and product information.

The ON Semiconductor MPSW42G is a high voltage NPN silicon transistor. It is designed for applications requiring a breakdown voltage of up to 300V.

 

Key electrical characteristics include a continuous collector current of 500mA and a DC current gain (hFE) of 40 at 30mA and 10V. The transistor offers a collector-emitter saturation voltage of 500mV at 2mA/20mA and a current-gain bandwidth product (fT) of 50MHz.

 

This device has a total power dissipation of 1W at 25°C ambient temperature and 2.5W at 25°C case temperature. It operates within a junction temperature range of -55°C to +150°C.

 

The MPSW42G is supplied in a TO-92 (TO-226) package, suitable for through-hole mounting. It is RoHS3 compliant and has an MSL rating of 1.

MPSW42G Quick Information

Product Type: NPN Silicon Transistor
Canonical Name: MPSW42G NPN Silicon High Voltage Transistor
Subcategory: Bipolar (BJT) - Single

MPSW42G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MPSW42G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MPSW42G Features

  • High voltage NPN silicon transistor.
  • 300V collector-emitter breakdown voltage.
  • 500mA continuous collector current.
  • 1W power dissipation at 25°C ambient.
  • TO-92 package for through-hole mounting.

MPSW42G Applications

  • Suitable for high voltage circuits.
  • General purpose amplification tasks.
  • Used in power supply applications.
  • Ideal for switching applications.

MPSW42G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MPSW42G?

The maximum collector-emitter voltage (VCEO) for the MPSW42G is 300 Vdc.

What is the continuous collector current rating of the MPSW42G?

The MPSW42G has a continuous collector current (IC) rating of 500 mAdc.

What is the power dissipation of the MPSW42G at 25°C ambient?

The total device dissipation (PD) for the MPSW42G is 1.0 W at 25°C ambient temperature.

What is the operating temperature range for the MPSW42G transistor?

The operating and storage junction temperature range (TJ, Tstg) for the MPSW42G is -55°C to +150°C.

What package type is the MPSW42G supplied in?

The MPSW42G is supplied in a TO-92 (TO-226) package.

How is the MPSW42G mounted?

The MPSW42G is designed for through-hole mounting.

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