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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,900 pcs
|
6900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,188 pcs
|
6188 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
2,210 pcs
|
2210 pcs | On Request | 1 | On Request | On Request | 1144+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Collector - Emitter Saturation Voltage | |
| Collector Current | |
| Collector Current (Maximum) | |
| Collector Cutoff Current (Maximum @ VCB = 40 Vdc, IE = 0) | |
| Collector Cutoff Current (Maximum @ VCE = 40 Vdc, IB = 0) | |
| Collector Emitter Breakdown Voltage (Maximum) | |
| Collector Emitter Breakdown Voltage (Minimum @ IC = -1.0 mAdc, IB = 0) | |
| Collector-Base Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| Current-Gain - Bandwidth Product | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ @ Ic, Vce) | |
| DC Current Gain Hfe (Minimum @ IC = -50 mAdc, VCE = -1.0 Vdc) | |
| DC Current Gain Hfe (Minimum @ IC = 250 mAdc, VCE = 1.0 Vdc) | |
| Emitter Cutoff Current | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| Frequency | |
| Frequency - Transition | |
| Lead Style | |
| Mounting Type | |
| Operating Junction Temperature Range | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Thermal Resistance | |
| Total Device Dissipation (Maximum @ @ TC = 25 °C) | |
| Total Device Dissipation (Maximum @ Ta = 25 °C) | |
| Transistor Type | |
| Vce Saturation | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MPSW06RLRAG is an NPN silicon transistor designed for amplifier applications. It offers a maximum collector-emitter voltage of 80V and a continuous collector current of 500mA.
Key electrical characteristics include a DC current gain (hFE) of 60 minimum at 250mA and 1V, and a collector-emitter saturation voltage of 400mV maximum at 10mA and 250mA. The transistor has a transition frequency of 50MHz.
This device is housed in a TO-92 (TO-226) package, suitable for through-hole mounting. It operates within a temperature range of -55°C to +150°C.
With a power dissipation of 1W at 25°C ambient temperature, the MPSW06RLRAG is suitable for various amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 80 Vdc.
The continuous collector current is 500 mAdc.
The total device dissipation is 1.0 W at 25°C ambient temperature.
The operating and storage junction temperature range is -55°C to +150°C.
The minimum DC Current Gain (hFE) is 60 at 250mA collector current and 1V collector-emitter voltage.
The package type is TO-92 (TO-226).