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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,146 pcs
|
5146 pcs | On Request | 1 | On Request | On Request | 1012 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter On Voltage | |
| Collector - Emitter Saturation Voltage | |
| Collector Current | |
| Collector Current (Maximum) | |
| Collector Cutoff Current (Maximum @ VCB = 30 Vdc, IE = 0) | |
| Collector Cutoff Current (Maximum @ VCB = 40 Vdc, IE = 0) | |
| Collector Cutoff Current (Maximum) | |
| Collector Emitter Breakdown Voltage (Maximum) | |
| Collector Emitter Breakdown Voltage (Minimum @ IC = 10 mAdc, IB = 0) | |
| Collector-Base Breakdown Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| Current-Gain - Bandwidth Product | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ IC = 150 mA, VCE = 10 V) | |
| DC Current Gain Hfe (Minimum @ IC = -100 mAdc, VCE = -1.0 Vdc) | |
| Emitter Cutoff Current | |
| Emitter-Base Breakdown Voltage | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Supplier Device Package | |
| Thermal Resistance (Maximum @ Junction to case) | |
| Thermal Resistance (Maximum @ Junction-to-Ambient) | |
| Total Device Dissipation (Maximum @ @ TC = 25 °C) | |
| Total Device Dissipation (Maximum @ Ta = 25 °C) | |
| Transistor Type | |
| Vce Saturation | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MPSW01ARLRPG from ON Semiconductor is a high current NPN silicon transistor. It is designed for applications requiring significant current handling capabilities, with a continuous collector current rating of 1A and a collector-emitter voltage of up to 40V.
This transistor offers a power dissipation of 1W at 25°C ambient temperature, or 2.5W at 25°C case temperature. It operates within a junction temperature range of -55°C to +150°C, making it suitable for various environmental conditions. The DC current gain (hFE) is a minimum of 60 at 100mA collector current and 1V VCE.
The MPSW01ARLRPG is packaged in a TO-92 (TO-226) package, a common through-hole form factor. This package type, along with its leaded construction, facilitates easy mounting on printed circuit boards for through-hole assembly processes. The transistor's specifications include a frequency transition of 50MHz and a Vce saturation of 0.5V at 100mA collector current and 1A collector current.
Key electrical characteristics include a collector-emitter breakdown voltage of 40V and an emitter-base breakdown voltage of 5.0V. The device also exhibits an output capacitance (Cobo) of 20pF at 1MHz. Its thermal resistance is 125°C/W junction-to-ambient and 50°C/W junction-to-case.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 40V.
The continuous collector current is 1000 mAdc.
The total device dissipation is 1W at 25°C ambient temperature.
The operating and storage junction temperature range is -55°C to 150°C.
The MPSW01ARLRPG is supplied in a TO-92 (TO-226) package.
The DC current gain (hFE) is a minimum of 60 at 100mA collector current and 1V VCE.