| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,324 pcs
|
2324 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MPSU45 is an NPN Silicon Darlington Amplifier Transistor manufactured by Motorola Semiconductor. This device is designed for amplifier and driver applications, offering high DC current gain, with a minimum hFE of 25,000 at IC = 200 mAdc. It features a Collector-Emitter Breakdown Voltage (BVCES) of 40 Vdc and a maximum Collector Current (IC) of 2 Adc.
The transistor has a low Collector-Emitter Saturation Voltage (VCE(sat)) of 1.6 Vdc at IC = 1.0 Adc. It is constructed monolithically for high reliability and is a complement to the PNP MPS-U95. The MPSU45 is housed in a TO-220-3 package and is suitable for through-hole mounting.
Key electrical characteristics include a Collector-Base Voltage (VCB) of 50 Vdc and an Emitter-Base Voltage (VEB) of 12 Vdc. The device has a maximum power dissipation of 1 Watt at TA = 25°C and 10 Watts at TC = 25°C. Thermal resistance from junction to ambient is 125 °C/W, and from junction to case is 12.5 °C/W. The operating and storage junction temperature range is -55 to +150 °C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.54 | $2.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the MPSU45 is 2 Adc.
The collector-emitter breakdown voltage (BVCES) of the MPSU45 is a minimum of 40 Vdc.
The DC current gain (hFE) of the MPSU45 is a minimum of 25,000 at IC = 200 mAdc.
The MPSU45 transistor is supplied in a TO-220-3 package.
The operating and storage junction temperature range for the MPSU45 is -55 to +150 °C.