| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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471 pcs
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471 pcs | On Request | 1 | On Request | On Request | 98 | On Request | On Request |
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The MPSH11 from On Semiconductor is an NPN bipolar junction transistor (BJT) specifically designed for RF small signal applications. It operates with a maximum collector-emitter voltage (VCEO) of 25V and can handle a maximum collector current (IC) of 50mA. The transistor exhibits a high transition frequency (fT) of 650MHz, making it suitable for high-frequency circuits.
This RF transistor is housed in a TO-92-3 package, a common through-hole form factor. It features a minimum DC current gain (hFE) of 60 at 4mA and 10V. The operating temperature range is from -55°C to 150°C (TJ), providing robustness in various environmental conditions. The MPSH11 is RoHS3 compliant, MSL 1, and REACH unaffected.
Its specifications make the MPSH11 a viable component for RF amplification and signal processing stages in electronic designs requiring small signal handling at high frequencies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MPSH11 is 25V.
The maximum continuous collector current (IC) for the MPSH11 is 50mA.
The minimum DC current gain (hFE) for the MPSH11 is 60 at 4mA collector current and 10V collector-emitter voltage.
The transition frequency (fT) of the MPSH11 is 650MHz.
The MPSH11 can operate in a temperature range of -55°C to 150°C (TJ).
The MPSH11 is supplied in a TO-92-3 package.
Yes, the MPSH11 is RoHS3 compliant.