| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,900 pcs
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1900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MPSH10 from On Semiconductor is an NPN silicon planar RF transistor. It is designed for high-frequency applications with a transition frequency (fT) of 650MHz at 4mA collector current and 10V collector-emitter voltage. The transistor offers a collector-emitter voltage of 25V and a continuous collector current rating of 25mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 4mA and 10V, and a maximum collector-emitter saturation voltage of 0.5V. The collector base capacitance is specified at a maximum of 0.7pF at 1MHz.
This RF transistor operates within a temperature range of -55°C to +150°C and has a maximum power dissipation of 350mW at 25°C ambient temperature. It is supplied in a TO-92-3 package suitable for through-hole mounting.
The MPSH10 is suitable for various RF circuit designs requiring small signal amplification at high frequencies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The transition frequency (fT) of the MPSH10 is 650MHz.
The maximum collector-emitter voltage (VCEO) for the MPSH10 is 25V.
The maximum power dissipation (Ptot) for the MPSH10 is 350mW at 25°C.
The operating and storage temperature range for the MPSH10 is -55°C to +150°C.
The MPSH10 transistor is supplied in a TO-92-3 package.
The minimum DC current gain (hFE) for the MPSH10 is 60 at 4mA collector current and 10V collector-emitter voltage.