| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE Electronics MPSA92 is a PNP silicon transistor suitable for various electronic applications requiring high voltage switching or amplification. It features a maximum collector current of 500 mA and a collector-emitter breakdown voltage of 300 V. The transistor is rated for a power dissipation of 625 mW and operates within a temperature range of -55°C to 150°C.
This component is packaged in a TO-92 (TO-226) package, designed for through-hole mounting. Its DC current gain (hFE) is a minimum of 25 at 30mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce) is a maximum of 500mV at 2mA collector current and 2mA base current. With a transition frequency of 50 MHz, it is suitable for moderate frequency applications.
The MPSA92 is specified as RoHS3 Compliant, with an MSL of 1 and REACH Unaffected status. These compliance details are based on available database information and should be verified for critical applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MPSA92 has a maximum continuous collector current of 500 mA.
The MPSA92 transistor has a collector-emitter breakdown voltage of 300 V.
The MPSA92 operates from -55°C to 150°C.
The MPSA92 is supplied in a TO-92 (TO-226) package.
The MPSA92 is designed for through-hole mounting.