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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,913 pcs
|
9913 pcs | On Request | 1 | On Request | On Request | 2003 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter On Voltage | |
| Collector - Emitter Saturation Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| Current Gain (Minimum @ IC = 10 mA, VCE = 5.0 V) | |
| Current Gain (Minimum @ IC = 100 mA, VCE = 5.0 V) | |
| Current Gain (Minimum/Maximum) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain Bandwidth Product (Typical @ IC = 10 mA, VCE = 5.0 V, f = 100 MHz) | |
| Gain-Bandwidth Product (Typical) | |
| Lead Style | |
| Leakage Current (Maximum @ VCB = -30 V, IE = 0) | |
| Leakage Current (Maximum @ VEB = 8.0 V, IC = 0) | |
| Mounting Type | |
| Operating Temperature | |
| Operating Voltage (Maximum) | |
| Operating and Storage Junction Temperature Range | |
| Power | |
| Supplier Device Package | |
| Thermal Resistance (Typical @ Device mounted on FR -4 PCB 1.6" X 1.6" X 0.06") | |
| Thermal Resistance (Typical) | |
| Total Device Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MPSA65 is a PNP Darlington transistor manufactured by ON Semiconductor, designed for applications requiring very high current gain. This device operates with a collector-emitter voltage of up to 30V and can handle a continuous collector current of 1.2A.
Key electrical characteristics include a minimum DC current gain (hFE) of 20,000 at 100mA and 5V, and a gain-bandwidth product (fT) of 100MHz at 10mA and 5V. The transistor exhibits a collector-emitter saturation voltage (VCE(sat)) of 1.5V maximum at 100µA base current and 100mA collector current, and a typical base-emitter on-voltage (VBE(on)) of 2.0V at 100mA and 5V.
This transistor is housed in a TO-92-3 package, suitable for through-hole mounting. It operates within a junction temperature range of -55°C to +150°C. The device has a total power dissipation of 625mW at 25°C ambient temperature and a junction-to-case thermal resistance of 83.3°C/W.
The MPSA65 is suitable for various amplification and switching applications where high current gain is essential. Its robust specifications and standard packaging make it a versatile component for electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MPSA65 transistor has a collector-emitter voltage rating of 30V.
The MPSA65 transistor can handle a continuous collector current of 1.2A.
The MPSA65 transistor operates between -55°C and +150°C.
The MPSA65 transistor is supplied in a TO-92-3 package.
The MPSA65 transistor has a minimum DC current gain of 20,000 at 100mA and 5V.
The MPSA65 transistor has a gain-bandwidth product of 100MHz.