| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MPSA63 is a PNP Silicon Darlington Transistor manufactured by TEXET. This device is part of the MPSA62/63/64 series and is suitable for applications requiring high gain.
Key electrical characteristics include a Collector-Emitter Breakdown Voltage of -30V for the MPSA63/64 variants and -20V for the MPSA62. The continuous collector current is rated at -500mA. DC Current Gain (hFE) can reach up to 20,000 under specific test conditions.
Thermal specifications include a maximum total power dissipation of 625mW at 25°C ambient temperature and 1.5W at 25°C case temperature. The operating and storage junction temperature range is from -55°C to +150°C.
The MPSA63 is supplied in a TO-92 through-hole package, making it suitable for standard PCB mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector-Emitter Breakdown Voltage for the MPSA63/64 is -30 Vdc, and for the MPSA62 it is -20 Vdc.
The maximum continuous collector current (IC) for the MPSA63 is -500 mAdc.
The DC Current Gain (hFE) for the MPSA63 is 10,000 minimum at IC = -100 mAdc, VCE = -5.0 Vdc, and 5,000 minimum at IC = -10 mAdc, VCE = -5.0 Vdc.
The operating and storage junction temperature range for the MPSA63 is -55°C to +150°C.
The MPSA63 is supplied in a TO-92 package.
The RoHS Status for the MPSA63 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MPSA63 is 1 Unlimited.