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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,699 pcs
|
5699 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor MPSA56RA is a single PNP bipolar junction transistor (BJT) designed for general-purpose applications. It offers a collector-emitter breakdown voltage of 80V and can handle a maximum collector current of 500mA. The transistor has a maximum power dissipation of 625mW and a transition frequency of 50MHz.
This device is suitable for through-hole mounting and comes in a TO-92-3 package. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 100mA and 1V, and a Vce saturation of 200mV maximum at 10mA/100mA. The operating temperature range is from -55°C to 150°C (TJ).
It is specified with RoHS3 compliance and an MSL 1 rating. The MPSA56RA is a reliable component for various electronic circuits requiring PNP amplification or switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage for the MPSA56RA is 80V.
The MPSA56RA transistor has a maximum collector current of 500mA.
The MPSA56RA operates within a temperature range of -55°C to 150°C (TJ).
The MPSA56RA is supplied in a TO-92-3 package.