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MPSA55 The ON Semiconductor MPSA55 is a PNP bipolar junction transistor designed for amplifier applications. It features a 60V collector-emitter voltage and 500mA continuous collector current.
Mfr Part #:

MPSA55

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MPSA55 is a PNP bipolar junction transistor designed for amplifier applications. It features a 60V collector-emitter voltage and 500mA continuous collector current.
✓ Total Stock: 6,040 pcs
$ Price Range: $0.99

MPSA55 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
6,000 pcs
On Request
6000 pcs On Request 1 On Request On Request On Request On Request On Request
Partservice ✓
Non-Authorised Inventory information
40 pcs
On Request
40 pcs On Request 1 On Request On Request On Request On Request On Request
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MPSA55 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MPSA55 Description

Short technical summary and product information.

The MPSA55 is a PNP bipolar junction transistor (BJT) from ON Semiconductor, suitable for amplifier applications. It offers a maximum collector-emitter voltage of 60V and a continuous collector current of 500mA.

 

This device has a maximum power dissipation of 625mW at 25°C ambient temperature and 1.5W at 25°C case temperature. The operating and storage junction temperature range is from -55°C to +150°C.

 

The MPSA55 is packaged in a TO-92 (TO-226) package with a through-hole mounting type. It has a DC current gain (hFE) of 100 at 100mA collector current and 1V Vce, and a collector-emitter saturation voltage of 250mV at 10mA base current and 100mA collector current.

 

With a gain bandwidth product of 50MHz, the MPSA55 is a versatile component for various electronic circuits requiring PNP amplification.

MPSA55 Quick Information

Product Type: PNP Transistor
Canonical Name: MPSA55 PNP Medium Power Amplifier Transistor
Subcategory: BJT

MPSA55 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MPSA55 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MPSA55 Features

  • PNP bipolar junction transistor for amplification.
  • 60V collector-emitter voltage rating.
  • 500mA continuous collector current.
  • 625mW power dissipation at 25°C ambient.
  • TO-92 package with through-hole mounting.

MPSA55 Applications

  • Suitable for general-purpose amplification.
  • Used in signal processing circuits.
  • Applicable for low-power switching.
  • Component in audio pre-amplifiers.

MPSA55 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MPSA55?

The maximum collector-emitter voltage for the MPSA55 is 60 Vdc.

What is the continuous collector current rating of the MPSA55?

The MPSA55 has a continuous collector current rating of 500 mAdc.

What is the operating temperature range for the MPSA55 transistor?

The operating and storage junction temperature range for the MPSA55 is -55°C to +150°C.

What package type is the MPSA55 supplied in?

The MPSA55 is supplied in a TO-226-3, TO-92-3 Long Body package.

What is the DC current gain (hFE) of the MPSA55?

The MPSA55 has a minimum DC current gain (hFE) of 100 at 100mA collector current and 1V Vce.

What is the collector-emitter saturation voltage for the MPSA55?

The collector-emitter saturation voltage for the MPSA55 is a maximum of 250mV at 10mA base current and 100mA collector current.

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