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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
400 pcs
|
400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
110 pcs
|
110 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ IC = 100 µA, IC = 0) | |
| Breakdown Voltage (Minimum @ IC=1.0 mA, IB=0) | |
| Breakdown Voltage (Minimum @ IC=100 μA, IE=0) | |
| Collector-Base Capacitance | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Derate above 25°C | |
| Frequency | |
| Leakage Current (Maximum @ VCB = 160 V, IE = 0) | |
| Leakage Current (Maximum @ VEB = 4.0 V, IC = 0) | |
| Mounting Type | |
| Operating Temperature | |
| Operating Voltage (Maximum) | |
| Operating and Storage Junction Temperature Range | |
| Power | |
| Power Dissipation (Maximum) | |
| Saturation Voltage (Maximum @ IC = 20 mA, IB = 2.0 mA) | |
| Supplier Device Package | |
| Thermal Resistance | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| frequency (Unspecified condition) | |
| gain (Minimum @ IC = -1.0 mA, VCE = -10 V) | |
| gain (Minimum @ IC = -10 mA, VCE = -10 V) | |
| gain (Minimum @ IC = -30 mA, VCE = -10 V) |
The MPSA43 is a high-voltage NPN bipolar junction transistor (BJT) manufactured by On Semiconductor. It is designed for applications requiring high voltage amplification, such as video output stages in CRT displays and other high-voltage circuits.
Key electrical characteristics include a collector-emitter voltage (VCES) of 200V and a continuous collector current (IC) of 500mA. The device offers a DC current gain (hFE) ranging from 25 to 200 depending on the operating conditions. Its saturation voltage (VCE(sat)) is typically 0.4V at 20mA collector current and 2.0mA base current, and the base-emitter saturation voltage (VBE(sat)) is 0.9V under the same conditions.
With a power dissipation of 625mW, the MPSA43 is housed in a TO-92 (TO-226) long body package, suitable for through-hole mounting. The operating and storage junction temperature range is from -55°C to 150°C. The transistor also has a current gain bandwidth product (fT) of 50MHz at 10mA collector current and 20V collector-emitter voltage.
This component is well-suited for designs needing reliable high-voltage switching or amplification. Its robust specifications and standard TO-92 package make it a practical choice for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCES) for the MPSA43 is 200V.
The MPSA43 has a continuous collector current rating of 200mA.
The operating and storage junction temperature range for the MPSA43 is -55°C to 150°C.
The MPSA43 is available in a TO-92 (TO-226) long body package.
The minimum DC current gain (hFE) of the MPSA43 at 1mA collector current and 10V collector-emitter voltage is 25.
The collector-emitter saturation voltage (VCE(sat)) for the MPSA43 is a maximum of 0.4V at 20mA collector current and 2.0mA base current.