| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MPSA13 is an NPN Darlington transistor manufactured by NTE Electronics, suitable for various electronic circuits requiring high gain amplification. This component operates with a maximum collector-emitter voltage of 30V and can handle a continuous collector current of up to 500mA.
With a total device power dissipation of 625mW at 25°C ambient temperature, the MPSA13 is designed for through-hole mounting in a standard TO-92 package. Its electrical characteristics include a high DC current gain (hFE) of 10000 at 100mA and 5V, and a collector-emitter saturation voltage of 1.5V at 100µA and 100mA. The transistor also offers a current-gain bandwidth product of 125MHz.
Operating within a junction temperature range of -55°C to 150°C, the MPSA13 is a reliable choice for applications demanding robust performance. Its through-hole mounting type and TO-92 package facilitate easy integration into printed circuit boards for both prototyping and production.
Key specifications include a 30V breakdown voltage, 500mA current rating, and 625mW power dissipation. The device is suitable for applications requiring high current gain and moderate switching speeds.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the MPSA13 is 30 Vdc.
The MPSA13 has a continuous collector current rating of 500 mAdc.
The total device power dissipation at an ambient temperature of 25°C is 625 mW.
The MPSA13 operates between -55°C and 150°C.
The minimum DC current gain (hFE) for the MPSA13 at 100mA and 5V is 10000.
The MPSA13 is available in a TO-92 package.