MPSA06RA The ON Semiconductor MPSA06RA is an NPN bipolar junction transistor designed for amplifier applications. It features an 80V collector-emitter voltage and 500mA continuous collector current.
Mfr Part #:

MPSA06RA

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MPSA06RA is an NPN bipolar junction transistor designed for amplifier applications. It features an 80V collector-emitter voltage and 500mA continuous collector current.
Total Stock: 13,020 pcs
$ Price Range: $0.99

MPSA06RA Available from 1 distributor

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MPSA06RA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current - Continuous
Collector-Base Voltage
Collector-Emitter Saturation Voltage (Max) @ Ib, Ic
Collector-Emitter Voltage
Current
Current-Gain - Bandwidth Product
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Mounting Type
Operating Temperature
Operating and Storage Junction Temperature Range
Power
Supplier Device Package
Supplier Package
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Total Device Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MPSA06RA Description

Short technical summary and product information.

The ON Semiconductor MPSA06RA is an NPN bipolar junction transistor (BJT) suitable for amplifier applications. It offers a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 500mA.

 

This transistor has a maximum power dissipation of 625mW at 25°C ambient temperature. It operates within a junction temperature range of -55°C to 150°C. The DC current gain (hFE) is a minimum of 100 at 100mA collector current and 1V VCE. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 250mV at 10mA base current and 100mA collector current.

 

The MPSA06RA has a gain-bandwidth product (fT) of 100MHz. It is packaged in a TO-92-3 through-hole configuration, making it suitable for standard PCB mounting.

 

Key electrical characteristics include an emitter-base breakdown voltage (VEBO) of 4V and a collector-base voltage (VCBO) of 80V. Thermal resistance from junction to ambient is 200°C/W, and from junction to case is 83.3°C/W.

MPSA06RA Quick Information

Product Type: NPN Transistor
Series: Mpsa06
Canonical Name: MPSA06RA NPN Transistor
Subcategory: BJT

MPSA06RA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MPSA06RA Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MPSA06RA Features

  • NPN bipolar junction transistor for amplification.
  • 80V collector-emitter voltage rating.
  • 500mA continuous collector current.
  • 625mW maximum power dissipation.
  • TO-92-3 through-hole package.

MPSA06RA Applications

  • Suitable for switching applications
  • Used in amplification circuits
  • Ideal for low to medium power circuits
  • Designed for through-hole mounting

MPSA06RA FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MPSA06RA?

The maximum collector-emitter voltage (VCEO) for the MPSA06RA is 80 Vdc.

What is the continuous collector current rating of the MPSA06RA?

The MPSA06RA can handle a continuous collector current (IC) of 500 mAdc.

What is the power dissipation of the MPSA06RA at 25°C?

The total device dissipation (PD) for the MPSA06RA is 625 mW at 25°C ambient temperature.

What is the operating temperature range for the MPSA06RA transistor?

The operating and storage junction temperature range for the MPSA06RA is -55°C to 150°C.

What is the DC current gain (hFE) of the MPSA06RA?

The minimum DC current gain (hFE) for the MPSA06RA is 100 at 100mA collector current and 1V VCE.

What is the package type for the MPSA06RA transistor?

The MPSA06RA is supplied in a TO-92-3 through-hole package.

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