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25 pcs
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25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MPSA06 from Central Semiconductor is an NPN bipolar junction transistor (BJT) suitable for a wide range of electronic circuits. This component features a maximum collector-emitter voltage (VCEO) of 80V and a maximum DC collector current of 0.5A, with a continuous collector current rating of 0.45A.
Key electrical characteristics include a minimum DC collector-to-base gain (Hfe) of 100 and a typical gain bandwidth product (fT) of 100 MHz. The transistor has a low collector-emitter saturation voltage of 0.25V, making it efficient for switching applications.
Packaged in a standard TO-92 through-hole configuration, the MPSA06 is designed for ease of mounting on printed circuit boards. It operates across a wide temperature range, from -65 C to +150 C, and has a maximum power dissipation of 625 mW. This makes it a versatile choice for both commercial and industrial electronic designs.
This transistor is classified under Bipolar Transistors - BJT, specifically within the Single, Pre-Biased category. Its robust specifications and common packaging make it a reliable component for amplification and switching tasks in various electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MPSA06 is 80V.
The maximum DC collector current for the MPSA06 transistor is 0.5A.
The gain bandwidth product (fT) of the MPSA06 is typically 100 MHz.
The MPSA06 operates from a minimum of -65 C to a maximum of +150 C.
The MPSA06 transistor is supplied in a TO-92 package.
The MPSA06 transistor is packaged in Bulk.
