| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
350 pcs
|
350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MPSA05RLRMG is an NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for amplifier applications and features a maximum collector-emitter voltage of 60V and a continuous collector current of 500mA.
This transistor offers a DC current gain (hFE) of 100 at 100mA collector current and 1V VCE. The saturation voltage (VCE(sat)) is a maximum of 250mV at 10mA base current and 100mA collector current. Its gain-bandwidth product (fT) is 100MHz.
The MPSA05RLRMG operates over a wide temperature range of -55°C to 150°C. It is housed in a TO-92 package, suitable for through-hole mounting.
Key electrical characteristics include a 60V breakdown voltage and a 4.0V emitter-base breakdown voltage. The device also has a maximum power dissipation of 625mW at 25°C ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MPSA05RLRMG is 60 Vdc.
The MPSA05RLRMG can handle a continuous collector current (IC) of 500 mAdc.
The operating and storage junction temperature range for the MPSA05RLRMG is -55°C to +150°C.
The MPSA05RLRMG has a minimum DC current gain (hFE) of 100 at 100mA collector current and 1V VCE.
The MPSA05RLRMG is supplied in a TO-92 package.