| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,130 pcs
|
2130 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
517 pcs
|
517 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MPSA05 is an NPN silicon transistor manufactured by ON Semiconductor, suitable for low power output and medium power driver applications. It is designed to complement PNP transistors in complementary pairs.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 60V and a maximum collector current (IC) of 500mA. The transistor offers a typical DC current gain (hFE) of 100 at 100mA and 1V. Its saturation voltage (VCE(SAT)) is a maximum of 250mV at 10mA base current and 100mA collector current. The transition frequency (fT) is typically 100MHz at 10mA collector current and 2V collector-emitter voltage.
This device operates within a junction temperature range of -55°C to +150°C. It has a power dissipation rating of 625mW at 25°C ambient temperature and 1.5W at 25°C case temperature. The thermal resistance from junction to ambient (ΘJA) is 200°C/W, and from junction to case (ΘJC) is 83.3°C/W.
The MPSA05 is supplied in a TO-92 (TO-226) package, designed for through-hole mounting. The package is TO-226-3, TO-92-3 (TO-226AA) with formed leads.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MPSA05 is 60V.
The MPSA05 transistor has a continuous collector current rating of 500mA.
The MPSA05 transistor is supplied in a TO-92 (TO-226) package.
The operating and storage junction temperature range for the MPSA05 is -55°C to +150°C.
The typical DC current gain (hFE) for the MPSA05 is 100 at 100mA collector current and 1V collector-emitter voltage.