| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,500 pcs
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3500 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The ON Semiconductor MPS651RLRA is a single NPN bipolar junction transistor (BJT) housed in a TO-92 package. This component is suitable for various electronic applications requiring amplification or switching. It offers a collector-emitter breakdown voltage of 60V and can handle a continuous collector current of up to 2A.
The MPS651RLRA has a minimum DC current gain (hFE) of 75 at 1A and 2V, with a transition frequency of 75MHz. The maximum power dissipation is rated at 625mW. The saturation voltage (Vce) is a maximum of 500mV at 200mA and 2A.
This transistor is designed for through-hole mounting and comes with formed leads for easy integration into circuit boards. The packaging is available in cut tape (CT).
Key electrical characteristics include a 60V collector-emitter breakdown voltage and a 2A maximum collector current. The device is specified with a minimum DC current gain of 75 at 1A, 2V and a transition frequency of 75MHz.
60V.
TO-226-3, TO-92-3 (TO-226AA).
Minimum hFE of 75 at 1A collector current and 2V Vce.
75MHz.
625mW.
Maximum 500mV at 200mA base current and 2A collector current.
Through Hole.