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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Voltage |
The MPS650 from ON Semiconductor is a single NPN bipolar junction transistor (BJT) housed in a TO-92 package. This device is designed for through-hole mounting and offers a collector-emitter voltage rating of 40V and a continuous collector current of 2A.
Key electrical characteristics include a minimum DC current gain (hFE) of 175 at 1A and 2V, and a Vce saturation voltage of 500mV maximum at 200mA and 2A. The transistor operates across a wide temperature range of -55°C to 150°C (TJ) and has a power dissipation rating of 625 mW. Its frequency response extends to 75MHz.
This transistor is suitable for various amplification and switching applications where its robust current handling and voltage ratings are beneficial. The TO-92 package is common for discrete components in through-hole circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating for the MPS650 is 40V.
The MPS650 can handle a maximum continuous collector current of 2A.
The minimum DC current gain (hFE) for the MPS650 at 1A and 2V is 175.
The MPS650 operates within a temperature range of -55°C to 150°C (TJ).
The MPS650 is supplied in a TO-92 (TO-226) package.