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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,770 pcs
|
3770 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Breakdown Voltage (Minimum @ IC = -100 mAdc, VBE = 0) | |
| Breakdown Voltage (Minimum @ IC = 100 mAdc, IE = 0) | |
| Breakdown Voltage (Minimum @ IE = -100 mAdc, IC = 0) | |
| Collector Cutoff Current | |
| Collector-Emitter Sustaining Voltage | |
| Current | |
| Current-Gain - Bandwidth Product | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain Hfe (Minimum @ IC = -1.0 mAdc, VCE = -10 Vdc) | |
| DC Current Gain Hfe (Minimum @ IC = -10 mAdc, VCE = -10 Vdc) | |
| DC Current Gain Hfe (Minimum @ IC = -300 mAdc, VCE = -2.0 Vdc) | |
| DC Current Gain Hfe (Minimum @ IC = -50 mAdc, VCE = -1.0 Vdc) | |
| Emitter Cutoff Current | |
| Frequency | |
| Input Capacitance | |
| Input Impedance | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Output Capacitance | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vbe Saturation (Maximum @ IC = -300 mAdc, IB = -30 mAdc) | |
| Vbe Saturation (Maximum @ IC = -50 mAdc, IB = -2.5 mAdc) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vce Saturation (Maximum @ IC = -300 mAdc, IB = -30 mAdc) | |
| Vce Saturation (Maximum @ IC = -50 mAdc, IB = -2.5 mAdc) | |
| Voltage | |
| voltage (Minimum) |
The MPS3638A from ON Semiconductor is a PNP bipolar junction transistor (BJT) suitable for switching applications. It features a collector-emitter voltage of -25V and a continuous collector current of up to -500mA.
Key electrical characteristics include a DC current gain (hFE) ranging from 20 to 100 depending on the operating conditions, and a collector-emitter saturation voltage as low as -0.25V. The transistor has a gain-bandwidth product of 150MHz, indicating its suitability for moderate frequency applications.
Packaged in a TO-92 (TO-226) through-hole package, the MPS3638A operates across a wide temperature range of -55°C to 150°C. Its thermal resistance is 200°C/W junction-to-ambient and 83.3°C/W junction-to-case.
This device is available in Pb-free packaging. It is designed for general-purpose switching and amplification circuits where a PNP transistor is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MPS3638A has a maximum continuous collector current of 500 mAdc.
The operating and storage junction temperature range for the MPS3638A is -55°C to +150°C.
The MPS3638A is available in a TO-92 (TO-226) package.
The collector-emitter breakdown voltage (V(BR)CES) for the MPS3638A is -25 Vdc.
The current-gain bandwidth product (fT) for the MPS3638A is 150 MHz.