| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,648 pcs
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2648 pcs | On Request | 1 | On Request | On Request | 87+ | On Request | On Request |
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The Central Semiconductor MPQ3904 is a versatile silicon NPN quad transistor array, comprising four independent transistors within a single 14-pin DIP (TO-116) package. This configuration is ideal for applications requiring multiple discrete transistors in a compact form factor.
Designed for general-purpose amplifier and switching applications, the MPQ3904 offers robust electrical characteristics. Key specifications include a collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 200mA per transistor. The device also boasts a maximum power dissipation of 500mW per transistor and 2.0W for the total package, ensuring reliable operation under moderate loads. The operating and storage junction temperature range is -65°C to +150°C.
Electrical performance is further defined by a typical DC current gain (hFE) of 75 at 10mA, a low collector-emitter saturation voltage (VCE(SAT)) of 0.20V at 10mA, and a transition frequency (fT) of 250MHz at 100MHz. Input and output capacitances are also specified, aiding in high-frequency design considerations.
The TO-116 package is designed for through-hole mounting. The pin configuration details the connections for each of the four independent transistors, including collectors, bases, and emitters, with some pins designated as no connection.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MPQ3904 is 40V.
The continuous collector current (IC) for the MPQ3904 is 200mA per transistor.
The MPQ3904 is supplied in a TO-116 package.
The operating and storage junction temperature range for the MPQ3904 is -65°C to +150°C.
The typical DC current gain (hFE) of the MPQ3904 at IC=10mA is 75.