| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Turn Off Time | |
| Turn On Time |
The Central Semiconductor MPQ2907A is a versatile PNP Silicon Quad Transistor comprised of four independent transistors within a single package. It is designed for small signal, general purpose amplifier, and switching applications.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 60V and a Continuous Collector Current (IC) of 600mA. The device offers a maximum power dissipation of 650mW per transistor and 2.0W for the total package. It operates within a junction temperature range of -65°C to +150°C.
Electrical performance is further defined by a DC Current Gain (hFE) of up to 100 at 150mA, a transition frequency (fT) of 200MHz, and low output capacitance (Cob) of 8.0pF. Switching characteristics include a turn-on time of 30ns and a turn-off time of 150ns.
Packaged in a TO-116 through-hole configuration, the MPQ2907A is suitable for various electronic designs requiring multiple PNP transistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector-Emitter Voltage (VCEO) for the MPQ2907A is 60V.
The maximum Continuous Collector Current (IC) for the MPQ2907A is 600mA.
The MPQ2907A is available in a TO-116 package.
The operating and storage junction temperature range for the MPQ2907A is -65°C to +150°C.
The DC Current Gain (hFE) of the MPQ2907A is 100 at IC=150mA and VCE=10V.
The transition frequency (fT) for the MPQ2907A is 200MHz.