| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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14,875 pcs
|
14875 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MOC8204M from On Semiconductor is a high-voltage phototransistor optocoupler designed for isolation applications. It utilizes a gallium arsenide infrared emitting diode coupled with a high-voltage NPN silicon phototransistor, housed in a standard 6-pin dual-in-line package (PDIP6).
Key electrical specifications include a high breakdown voltage (BVCEO) of 400 V for the MOC8204M, a maximum working insulation voltage (VIORM) of 850 Vpeak, and an input-to-output test voltage of 1360 Vpeak (Method A) or 1594 Vpeak (Method B). The device also offers a high allowable over-voltage (VIOTM) of 6000 Vpeak.
Mechanical specifications include a minimum external creepage and clearance of 7 mm. The operating temperature range is -40°C to +100°C, with a storage temperature range of -40°C to +125°C. The maximum case temperature is 175°C.
This optocoupler is suitable for applications such as power supply regulators, digital logic inputs, microprocessor inputs, appliance sensor systems, and industrial controls. Its robust isolation capabilities make it a reliable choice for safety-critical systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
850 Vpeak.
400 V.
PDIP6.
-40°C to +100°C.
350 mA.
800 mW.
6000 Vpeak.