| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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359 pcs
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359 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Washable |
The Mini-Circuits MNA-6+ is a GaAs MESFET monolithic amplifier offering high dynamic range and repeatable performance. It operates over a wide frequency range of 0.5 to 2.5 GHz.
Key electrical specifications include a typical directivity of 17 dB, a low noise figure of 2.9 dB, and an output power of up to +18 dBm. The amplifier is designed for 2.8V and 5V operation and features internal DC blocking at the RF input and output.
Fabricated using GaAs MESFET technology, the MNA-6+ is enclosed in a compact 3x3 mm MCLP plastic package. It is aqueous washable, making it suitable for various manufacturing processes. Typical applications include buffer amplification in cellular, PCN, communications satellite, and defense systems.
Reliability data indicates an expected Mean Time Between Failures (MTBF) of 45,000 years at 85°C case temperature with 2.8V operation, and 7,000 years at 5V operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.00 | $1.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MNA-6+ operates from 0.5 to 2.5 GHz.
The typical directivity of the MNA-6+ is 17 dB.
The MNA-6+ has a typical noise figure of 2.9 dB.
The MNA-6+ can deliver an output power of up to +18 dBm.
The expected MTBF is 45,000 years at 85°C case temperature and 2.8V, and 7,000 years at 5V.
The MNA-6+ is supplied in the DQ849 case style, a 3x3 mm MCLP plastic package.