| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,060 pcs
|
1060 pcs | On Request | 1 | On Request | On Request | .70DY | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Spacing | |
| Lead Style | |
| Memory Type | |
| SVHC Present |
The Mitsubishi Electric MN4164P-12A is a DRAM (Dynamic Random-Access Memory) integrated circuit. It is organized as 64K x 1 bits, providing a specific memory configuration for electronic systems. This component operates with a speed grade of 12 nanoseconds, indicating its data access time.
This DRAM memory is suitable for various applications requiring volatile data storage. Its organization and speed are key parameters for designers integrating it into memory subsystems. The part is manufactured by Mitsubishi Electric.
Environmental compliance information indicates RoHS3 compliance, with REACH unaffected status. The Moisture Sensitivity Level (MSL) is rated as 1, signifying unlimited shelf life under standard conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MN4164P-12A memory is organized as 64K x 1.
The speed grade of the MN4164P-12A is 12 ns.
The MN4164P-12A is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MN4164P-12A is 1 Unlimited.
Yes, the MN4164P-12A is REACH Unaffected.