| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,333 pcs
|
12333 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
2,340 pcs
|
2340 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,006 pcs
|
1006 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | 1351 | On Request | On Request | |
|
121 pcs
|
121 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The NXP Semiconductors MMZ25332BT1 is an RF Amplifier suitable for various wireless communication standards including LTE, TDS-CDMA, and W-CDMA. It offers a significant gain of 26.5dB and a P1dB output power of 33dBm, making it effective for signal amplification in demanding applications.
Operating within a frequency range of 1.8GHz to 2.8GHz, this amplifier has a test frequency of 2.5GHz and a noise figure of 5.8dB. It requires an operating voltage between 3V and 5V and consumes 390mA of current.
The MMZ25332BT1 comes in a 12-VFQFN Exposed Pad package and is designed for surface mounting. Its compact 12-QFN (3x3) supplier package size is ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.98 | $0.98 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMZ25332BT1 operates between 3V and 5V.
The typical gain of the MMZ25332BT1 is 26.5dB.
The P1dB rating for the MMZ25332BT1 is 33dBm.
The noise figure of the MMZ25332BT1 is 5.8dB.
The MMZ25332BT1 covers a frequency range of 1.8GHz to 2.8GHz.
The MMZ25332BT1 is supplied in a 12-VFQFN Exposed Pad package.
The MMZ25332BT1 is designed for surface mounting.