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MMZ25332B4T1 The NXP Semiconductors MMZ25332B4T1 is an RF Power MMIC Amplifier designed for WLAN applications. It operates over a frequency range of 1.5 to 2.7 GHz.
Mfr Part #:

MMZ25332B4T1

Available from 4 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors MMZ25332B4T1 is an RF Power MMIC Amplifier designed for WLAN applications. It operates over a frequency range of 1.5 to 2.7 GHz.
✓ Total Stock: 4,252 pcs
$ Price Range: $0.98

MMZ25332B4T1 Available from 4 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MMZ25332B4T1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Frequency
Gain
Mounting Type
P1dB
Process
Quiescent Current
RF Type
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Test Frequency
Voltage
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MMZ25332B4T1 Description

Short technical summary and product information.

The NXP Semiconductors MMZ25332B4T1 is an RF Power MMIC Amplifier suitable for WLAN applications. This component operates within a frequency range of 1.5 GHz to 2.7 GHz, offering a P1dB of 33 dBm and a gain of 26.5 dB. It requires a supply voltage between 3 V and 5 V, with a quiescent current of 392 mA. The amplifier is housed in a 4x4mm QFN package and is designed for surface mount installation.

 

This RF amplifier utilizes the InGaP process technology. Its specifications make it suitable for various RF power amplification needs within its operating frequency band. The device is provided in a 24-VFQFN exposed pad package, ensuring reliable surface mounting.

 

Key electrical characteristics include a P1dB of 33 dBm and an IP3 of 48 dBm. The operating voltage range is 3 V to 5 V, and the quiescent current is approximately 392 mA. The component's frequency range is 1.5 GHz to 2.7 GHz, with a specified gain of 26.5 dB.

MMZ25332B4T1 Quick Information

Product Type: RF Power MMIC Amplifier
Canonical Name: NXP MMZ25332B4T1 RF Power MMIC Amplifier
Subcategory: Amplifier

MMZ25332B4T1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMZ25332B4T1 Estimated Pricing

Qty Low High
1+ $0.98 $0.98

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMZ25332B4T1 Features

  • Operates from 1.5 GHz to 2.7 GHz.
  • Provides 33 dBm P1dB output power.
  • Offers 26.5 dB of signal gain.
  • Requires 3 V to 5 V supply voltage.
  • Surface mountable 4x4mm QFN package.

MMZ25332B4T1 Applications

  • Ideal for WLAN RF signal amplification
  • Used in wireless communication systems
  • Suitable for compact RF modules
  • Designed for high linearity and power efficiency

MMZ25332B4T1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating frequency range of the MMZ25332B4T1?

The MMZ25332B4T1 operates from 1.5 GHz to 2.7 GHz.

What is the P1dB power level of this RF amplifier?

The P1dB of the MMZ25332B4T1 is 33 dBm.

What is the gain of the MMZ25332B4T1?

The gain of the MMZ25332B4T1 is 26.5 dB.

What package type is used for the MMZ25332B4T1?

It is packaged in a 24-VFQFN exposed pad package measuring 4x4mm.

What is the supply voltage range for this device?

The supply voltage ranges from 3 V to 5 V.

Is the MMZ25332B4T1 RoHS compliant?

RoHS compliance status is unverified.

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