| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,803 pcs
|
1803 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMZ09332BT1 from NXP Semiconductors is an RF amplifier suitable for various wireless communication standards including LTE, TDS-CDMA, and W-CDMA. This component operates with a supply voltage of 5V and draws a current of 240mA.
With a frequency range spanning from 130MHz to 1GHz and a test frequency of 1GHz, the MMZ09332BT1 offers a gain of 31dB and a P1dB of 32dBm. It is housed in a 12-VFQFN Exposed Pad package, with a supplier-specified package of 12-QFN (3x3).
The mounting type for this device is Surface Mount, making it suitable for integration into compact electronic designs. The RoHS status is compliant with RoHS3 standards, and it has a Moisture Sensitivity Level (MSL) of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.98 | $0.98 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage for the MMZ09332BT1 is 5V.
The MMZ09332BT1 is supplied in a 12-VFQFN Exposed Pad package.
The MMZ09332BT1 RF amplifier operates within a frequency range of 130MHz to 1GHz.
The MMZ09332BT1 has a gain of 31dB.
The P1dB rating for the MMZ09332BT1 is 32dBm.