| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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231,000 pcs
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231000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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The MMUN2241LT1G is a bipolar junction transistor (BJT) manufactured by On Semiconductor. It features a maximum collector-base and collector-emitter voltage of 50V, and a maximum collector current of 100mA. The device is packaged in a SOT-23-3 surface-mount package, suitable for compact electronic designs. Its specifications include a maximum input forward voltage of 40V, input reverse voltage of 6V, and a power dissipation of 246mW at 25°C. The transistor has a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V collector-emitter voltage, and a maximum Vce saturation of 250mV at 5mA base current and 10mA collector current. It also includes an integrated base resistor of 100kΩ. This component is used in switching and amplification applications where a pre-biased NPN transistor is required in a surface-mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50V.
It comes in a SOT-23-3 surface mount package.
The maximum collector current is 100mA.
Yes, it is RoHS3 compliant.
The maximum input forward voltage is 40V.