| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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183,000 pcs
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183000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMUN2237LT1G is a digital transistor from ON Semiconductor, designed to simplify circuit design by integrating a transistor with a monolithic bias resistor network. This NPN pre-biased transistor operates at a maximum collector-emitter voltage of 50V and can handle a continuous collector current of 100mA.
It features a Vce saturation of 250mV at 5mA/10mA and a DC current gain (hFE) of 80 minimum at 5mA/10V. The device has a power dissipation of 246mW and includes a nominal base-emitter resistor of 22 kΩ. The input forward voltage is rated at 40Vdc and the input reverse voltage at 10Vdc.
This component is supplied in a surface-mount SOT-23-3 (TO-236) package, making it suitable for space-constrained applications. The MMUN2237LT1G is designed to reduce component count and board space in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current rating is 100 mAdc.
The MMUN2237LT1G is supplied in a SOT-23-3 (TO-236) package.
The integrated base resistor value is 22 kΩ.
The minimum DC current gain (hFE) is 80 at 5mA, 10V.