MMUN2233LT1G The On Semiconductor MMUN2233LT1G is an NPN pre-biased transistor in a SOT-23-3 package. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

MMUN2233LT1G

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MMUN2233LT1G is an NPN pre-biased transistor in a SOT-23-3 package. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 656,206 pcs
$ Price Range: $0.99

MMUN2233LT1G Available from 6 distributors

✓ Authorised
✓ Non-Authorised

MMUN2233LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMUN2233LT1G Description

Short technical summary and product information.

The MMUN2233LT1G from On Semiconductor is a single, pre-biased NPN bipolar junction transistor (BJT). It is designed to simplify circuit design by integrating a transistor with a monolithic bias network, reducing component count and board space.

 

This device features a maximum collector-emitter voltage of 50Vdc and a continuous collector current of 100mAdc. It has a DC current gain (hFE) of at least 80 at 5mA collector current and 10V Vce. The saturation voltage (Vce) is a maximum of 250mV at 300µA base current and 10mA collector current. It also includes integrated resistors: R1 at 4.7 kOhms and R2 at 47 kOhms.

 

The MMUN2233LT1G is housed in a surface-mount SOT-23-3 (TO-236) package, making it suitable for compact electronic designs. Its maximum power dissipation is 246mW.

 

This transistor is Pb-Free and Halogen Free, complying with RoHS standards. It is designed for general-purpose low-power amplification, switching, and signal processing applications.

MMUN2233LT1G Quick Information

Product Type: NPN Pre-Biased Transistor
Canonical Name: On Semiconductor MMUN2233LT1G NPN Pre-Biased Transistor
Subcategory: Single, Pre-Biased

MMUN2233LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMUN2233LT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMUN2233LT1G Features

  • NPN pre-biased transistor with integrated resistors.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Surface mount SOT-23-3 package.
  • Pb-Free and Halogen Free.

MMUN2233LT1G Applications

  • Low-power amplification circuits.
  • General-purpose switching applications.
  • Signal processing circuits.
  • Compact electronic designs.

MMUN2233LT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMUN2233LT1G?

The maximum collector-emitter voltage is 50 Vdc.

What is the continuous collector current rating of the MMUN2233LT1G?

The continuous collector current is 100 mAdc.

What is the package type for the MMUN2233LT1G?

The package type is SOT-23-3 (TO-236).

What is the minimum DC current gain (hFE) for the MMUN2233LT1G?

The minimum DC current gain is 80 at 5mA collector current and 10V Vce.

What are the integrated resistor values in the MMUN2233LT1G?

The integrated resistors are R1 = 4.7 kOhms and R2 = 47 kOhms.

Is the MMUN2233LT1G RoHS compliant?

Yes, the MMUN2233LT1G is RoHS3 Compliant.

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