| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
399 pcs
|
399 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMUN2231LT1G is an NPN pre-biased transistor designed by ON Semiconductor. This device integrates a single transistor with a monolithic bias resistor network, simplifying circuit design and reducing board space. It features a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA.
The integrated bias resistor network includes two resistors, R1 and R2, each with a nominal value of 2.2 kΩ. The transistor type is NPN pre-biased, with a typical DC current gain (hFE) of 8 at 5mA collector current and 10V Vce. The saturation voltage (Vce(sat)) is a maximum of 250mV at 5mA base current and 10mA collector current.
This transistor is supplied in a SOT-23-3 (TO-236) surface mount package. It is designed to replace a single device and its external resistor bias network, offering reduced component count and system cost. The device is Pb-free and Halogen-free, compliant with RoHS standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the MMUN2231LT1G is 50 Vdc.
The continuous collector current (IC) for the MMUN2231LT1G is 100 mAdc.
The MMUN2231LT1G is supplied in a SOT-23-3 (TO-236) surface mount package.
The MMUN2231LT1G has integrated bias resistors R1 and R2, each with a nominal value of 2.2 kΩ.
The DC Current Gain (hFE) is a minimum of 8 at 5mA collector current and 10V Vce.