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MMUN2230LT1G The MMUN2230LT1G is an NPN pre-biased transistor from ON Semiconductor. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

MMUN2230LT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMUN2230LT1G is an NPN pre-biased transistor from ON Semiconductor. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 101,850 pcs
$ Price Range: $0.99

MMUN2230LT1G Available from 1 distributor

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✓ Non-Authorised
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101,850 pcs
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MMUN2230LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MMUN2230LT1G Description

Short technical summary and product information.

The ON Semiconductor MMUN2230LT1G is a digital transistor designed to simplify circuit design by integrating a single transistor with a monolithic bias resistor network. This NPN pre-biased transistor features a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA.

 

With a maximum power dissipation of 246mW at 25°C, this device is suitable for various applications requiring reduced component count and board space. It includes internal resistors with nominal values of 1 kΩ for both the series base resistor (R1) and the base-emitter resistor (R2).

 

The transistor is housed in a surface-mount SOT-23-3 (TO-236) package, making it ideal for compact electronic designs. The MMUN2230LT1G is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free, aligning with modern environmental standards.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 3 at 5mA/10V and a Vce saturation of 250mV maximum at 5mA/10mA. The input forward and reverse voltages are rated at 10Vdc.

MMUN2230LT1G Quick Information

Product Type: Pre-Biased Transistor
Canonical Name: NPN Pre-Biased Transistor
Subcategory: Pre-Biased Bipolar Junction Transistor (BJT)

MMUN2230LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MMUN2230LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMUN2230LT1G Features

  • NPN pre-biased transistor simplifies circuit design.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 1kΩ bias resistors.
  • Surface mount SOT-23-3 package.

MMUN2230LT1G Applications

  • Ideal for digital logic circuits.
  • Reduces component count in designs.
  • Saves board space in compact applications.
  • Suitable for general-purpose switching.

MMUN2230LT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMUN2230LT1G?

The maximum collector-emitter voltage (VCEO) for the MMUN2230LT1G is 50Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) rating for the MMUN2230LT1G is 100mA.

What is the package type for this transistor?

This transistor is available in a SOT-23-3 (TO-236) surface-mount package.

Is the MMUN2230LT1G RoHS compliant?

Yes, the MMUN2230LT1G is RoHS3 compliant.

What are the internal resistor values?

The MMUN2230LT1G has integrated bias resistors with nominal values of 1 kΩ for both the series base resistor (R1) and the base-emitter resistor (R2).

What is the minimum DC current gain (hFE)?

The minimum DC current gain (hFE) is 3 at 5mA collector current and 10V collector-emitter voltage.

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