MMUN2216LT1G The On Semiconductor MMUN2216LT1G is an NPN pre-biased transistor designed for simplified circuit design. It features a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

MMUN2216LT1G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MMUN2216LT1G is an NPN pre-biased transistor designed for simplified circuit design. It features a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 74,836 pcs
$ Price Range: $0.99

MMUN2216LT1G Available from 5 distributors

✓ Authorised
✓ Non-Authorised

MMUN2216LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMUN2216LT1G Description

Short technical summary and product information.

The MMUN2216LT1G from On Semiconductor is a digital transistor featuring a monolithic bias resistor network. This integrated design simplifies circuit construction by replacing discrete resistors and a transistor, thereby reducing component count and board space.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. It also incorporates a base resistor (R1) of 4.7 kΩ. The transistor exhibits a minimum DC current gain (hFE) of 160 at 5mA and 10V, with a Vce saturation of 250mV maximum at 1mA/10mA.

 

This device is supplied in a surface-mount SOT-23-3 package, suitable for automated assembly processes. Its design is intended to replace single devices and external bias networks, offering a cost-effective solution for various applications.

MMUN2216LT1G Quick Information

Product Type: NPN Pre-Biased Transistor
Canonical Name: MMUN2216LT1G NPN Pre-Biased Transistor
Subcategory: Bipolar (BJT) - Single, Pre-Biased

MMUN2216LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMUN2216LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMUN2216LT1G Features

  • NPN pre-biased transistor simplifies circuit design.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 4.7kΩ base resistor.
  • Surface mount SOT-23-3 package.

MMUN2216LT1G Applications

  • Used in low-power switching circuits
  • Suitable for signal amplification
  • Ideal for driver applications
  • Designed for surface-mount applications

MMUN2216LT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMUN2216LT1G?

The maximum collector-emitter voltage (VCEO) for the MMUN2216LT1G is 50 Vdc.

What is the continuous collector current rating of the MMUN2216LT1G?

The MMUN2216LT1G has a continuous collector current (IC) rating of 100 mAdc.

What is the base resistor value in the MMUN2216LT1G?

The MMUN2216LT1G includes an integrated base resistor (R1) with a nominal value of 4.7 kΩ.

What is the minimum DC current gain (hFE) for the MMUN2216LT1G?

The minimum DC current gain (hFE) for the MMUN2216LT1G is 160 at a test condition of 5mA collector current and 10V collector-emitter voltage.

What package type is the MMUN2216LT1G supplied in?

The MMUN2216LT1G is supplied in a SOT-23-3 package.

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