| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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34,402 pcs
|
34402 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
34,020 pcs
|
34020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,914 pcs
|
2914 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMUN2216LT1G from On Semiconductor is a digital transistor featuring a monolithic bias resistor network. This integrated design simplifies circuit construction by replacing discrete resistors and a transistor, thereby reducing component count and board space.
Key electrical specifications include a collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. It also incorporates a base resistor (R1) of 4.7 kΩ. The transistor exhibits a minimum DC current gain (hFE) of 160 at 5mA and 10V, with a Vce saturation of 250mV maximum at 1mA/10mA.
This device is supplied in a surface-mount SOT-23-3 package, suitable for automated assembly processes. Its design is intended to replace single devices and external bias networks, offering a cost-effective solution for various applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMUN2216LT1G is 50 Vdc.
The MMUN2216LT1G has a continuous collector current (IC) rating of 100 mAdc.
The MMUN2216LT1G includes an integrated base resistor (R1) with a nominal value of 4.7 kΩ.
The minimum DC current gain (hFE) for the MMUN2216LT1G is 160 at a test condition of 5mA collector current and 10V collector-emitter voltage.
The MMUN2216LT1G is supplied in a SOT-23-3 package.